THE USE OF S₂CL₂ FOR DOPING POLY-GAAS FILMS GROWN BY THE ORGANOMETALLIC PROCESSGHANDHI SK; REEP DH.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 12; PP. 2778-2780; BIBL. 5 REF.Article

THE EFFECT OF CHLORIDE ETCHING ON GAAS EPITAXY USING TMG AND ASH₃.RAJARAM BHAT; GHANDHI SK.1978; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1978; VOL. 125; NO 5; PP. 771-776; BIBL. 16 REF.Article

GROWTH AND PROPERTIES OF HETEROEPITAXIAL GAINAS ALLOYS ON GAAS SUBSTRATES USING TRIMETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE.BALIGA RJ; GHANDHI SK.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 5; PP. 683-687; BIBL. 22 REF.Article

INTERFACE REACTIONS AND GRAIN GROWTH PROCESSES IN POLY-GAAS DEPOSITED ON MOLYBDENUM SUBSTRATES BY THE ORGANOMETALLIC PROCESSSHASTRY SK; GHANDHI SK.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 61; NO 3; PP. 458-462; BIBL. 15 REF.Article

FACTORS INFLUENCING THE GROWTH OF GA⁰,47)/N⁰,53)AS ON INP SUBSTRATES USING THE METALORGANIC PROCESSWHITELEY JS; GHANDHI SK.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 2; PP. 383-388; BIBL. 24 REF.Article

LATERAL DIFFUSION OF ZINC AND TIN IN GALLIUM ARSENIDE.BALIGA BJ; GHANDHI SK.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 7; PP. 410-415; BIBL. 12 REF.Article

ANALYTICAL SOLUTIONS FOR THE BREAKDOWN VOLTAGE OF ABRUPT CYLINDRICAL AND SPHERICAL JUNCTIONS.JAYANT BALIGA B; GHANDHI SK.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 9; PP. 739-744; BIBL. 13 REF.Article

HETEROEPITAXIAL INAS FROM TRIETHYLINDIUM AND ARSINE. II. ELECTRICAL PROPERTIES.JAYANT BALIGA B; GHANDHI SK.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 12; PP. 1646-1650; BIBL. 14 REF.Article

HETEROEPITAXIAL INAS GROWN ON GAAS FROM TRIETHYLINDIUM AND ARSINE. I. GROWTH CHARACTERIZATION.JAYANT BALIGA B; GHANDHI SK.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 12; PP. 1642-1646; BIBL. 8 REF.Article

GROWTH OF SILICA AND PHOSPHOSILICATE FILMSJAYANT BALIGA B; GHANDHI SK.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 3; PP. 990-994; BIBL. 9 REF.Serial Issue

THE PREPARATION AND PROPERTIES OF TIN OXIDE FILMS FORMED BY OXIDATION OF TETRAMETHYLTIN.JAYANT BALIGA B; GHANDHI SK.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 6; PP. 941-944; BIBL. 12 REF.Article

THE PREPARATION AND PROPERTIES OF ARSENIC-DOPED TIN OXIDE FILMSYAR SUN HSU; GHANDHI SK.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 8; PP. 1434-1435; BIBL. 9 REF.Article

THERMAL STABILIZATION OF THIN-FILM GAAS SOLAR CELLS WITH GRAIN-BOUNDARY-EDGE PASSIVATIONGHANDHI SK; SHASTRY SK; BORREGO JM et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 1; PP. 25-27; BIBL. 7 REF.Article

VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM ARSENIDE USING HYDROGEN CHLORIDE GAS.RAJARAM BHAT; JAYANT BALIGA B; GHANDHI SK et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 10; PP. 1378-1382; BIBL. 9 REF.Article

OPEN TUBE DIFFUSION OF ZINC IN GALLIUM ARSENIDESHEALY JR; BALIGA BJ; GHANDHI SK et al.1980; IEEE ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 6; PP. 119-121; BIBL. 11 REF.Article

MEASUREMENT OF ENERGY BAND GAP USING AN ELECTROLYTE-SEMICONDUCTOR JUNCTION: WATER-GALLIUM INDIUM ARSENIDE ALLOYS. = MESURE DE BANDES INTERDITES AU MOYEN D'UNE JONCTION SEMICONDUCTEUR-ELECTROLYTE ALLIAGES ARSENIURE D'INDIUM ET DE GALLIUM-EAUJAYANT BALIGA B; RAJARAM BHAT; GHANDHI SK et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 9; PP. 3941-3945; BIBL. 16 REF.Article

HIGHLY ORIENTED ZINC OXIDE FILMS GROWN BY THE OXIDATION OF DIETHYLZINCGHANDHI SK; FIELD RJ; SHEALY JR et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 5; PP. 449-451; BIBL. 8 REF.Article

THE GROWTH OF TIN OXIDE FILMS AT ROOM TEMPERATUREGHANDHI SK; SIVIY R; BORREGO JM et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 12; PP. 833-835; BIBL. 7 REF.Article

ANOMALOUS DIFFUSION FROM DOPED OXIDES DUE TO DOPANT DEPLETION EFFECTS.JAYANT BALIGA B; RAJARAM BHAT; GHANDHI SK et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 9; PP. 773-774; BIBL. 6 REF.Article

COMPOSITION DEPENDENCE OF ENERGY GAP IN GAINAS ALLOYS.BALIGA BJ; BHAT R; GHANDHI SK et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 10; PP. 4608; BIBL. 10 REF.Article

LIFETIME CONTROL BY PALLADIUM DIFFUSION IN SILICONSO L; WHITELEY JS; GHANDHI SK et al.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 6; PP. 887-890; BIBL. 8 REF.Article

ION BEAM DAMAGE EFFECTS DURING THE LOW ENERGY CLEANING OF GAASGHANDHI SK; KWAN P; BHAT KN et al.1982; ELECTRON DEVICE LETT.; USA; DA. 1982; VOL. 3; NO 2; PP. 48-50; BIBL. 6 REF.Article

PREPARATION AND PROPERTIES OF ZINC OXIDE FILMS GROWN BY THE OXIDATION OF DIETHYLZINCSHEALY JR; JAYANT BALIGA B; FIELD RJ et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 3; PP. 558-561; BIBL. 9 REF.Article

ION-CLEANING DAMAGE IN (100) GAAS, AND ITS EFFECT ON SCHOTTKY DIODESKWAN P; BHAT KN; BORREGO JM et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 2; PP. 125-129; BIBL. 11 REF.Article

DIFFUSION LENGTH MEASUREMENTS IN SCHOTTKY BARRIER GAAS SOLAR CELLSLENDER RJ; TIWARI S; BORREGO JM et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 2; PP. 213-214; BIBL. 7 REF.Article